Department: Electrical and Electronics Engineering
Faculty: Science & Engineering
Email: rakib066888@yahoo.com
Contact: 01955529769
Academic Qualification
SSC Certification
Passing Year:
2008
Group:
Science
School:
B. L. Govt. High School, Sirajganj
HSC Certification
Passing Year:
2010
Group:
Science
College:
Ullapara Science College, Sirajganj
Honours Certification
Passing Year:
2015
Group:
EEE
University:
United International University (UIU)
Masters Certification
Passing Year:
Group:
University:
Training Experience
Teaching Area
Electronic Devices (G4-FET, GAA MOSFET, Nanotechnology etc. ) and Communication System (4G, LTE simulator, Optical Fiber communication etc.)
Publication
i. International Peer Reviewed Journal Articles
Md. R. Alam, Md. I. Hossain and J. Ferdous, “Analytical Device Model of Graphene Nanoribbon Field Effect Transistor”, IJRP, Vol. 14, Issue 1, pp. 1-14, 2018
Md. R. Alam, T. R. Pathan, H. Rahman, “Drain Current Model of Graphene Channel G4-FET and Gate-All-Around MOSFET”, IJIREEICE, Vol. 6, Issue 10, pp. 1-8, 2018
Md. R. Alam, Md. R. U. Mollah and Md. F. Khan, “Performance Analysis of Fully-Depleted Silicon-On-Insulator (SOI) G4-FET and Gate-All-Around (GAA) MOSFETs”, IJIREEICE, Vol. 7, Issue 3, pp. 1-5, 2019
Md. I. Hossain, Md. R. Alam and Dr. K. A. A. Mamun, “A Review of Locomotion Mechanism for Wireless Capsule Endoscopy”, IJIREEICE, Vol. 7, Issue 7, pp. 46-53, 2019
ii. National/International Conferences
Md. R. Alam and H. Rahman, “Effect of Gate Bias on Graphene Channel of G4-FET and Gate-All-Around MOSFET”, 10th ICECE, pp. 50-53, 2018